助教　蒲　江 (ホ コウ, Jiang Pu)

略歴

早稲田大学　先進理工学部　応用物理学科　学士（2012）
早稲田大学　先進理工学研究科　物理学及応用物理学専攻　修士（2014）
早稲田大学　先進理工学研究科　先進理工学専攻　博士（工学）（2017）
日本学術振興会　特別研究員DC1（兼任）（2014-2017）
名古屋大学　大学院工学研究科　応用物理学専攻　助教（2017-）

受賞歴

業績リスト Google Scholar

総論文数　58
Original paper (47)
Proceeding (6)
解説他 (5)

Original paper

47. Vapor-Phase Indium Intercalation in van der Waals Nanofibers of Atomically Thin W6Te6 Wires
Ryusuke Natsui, Hiroshi Shimizu, Yusuke Nakanishi, Zheng Liu, Akito Shimamura,Nguyen Tuan Hung, Yung-Chang Lin, Takahiko Endo, Jiang Pu, Iori Kikuchi, Taishi Takenobu, Susumu Okada, Kazu Suenaga, Riichiro Saito, and Yasumitsu Miyata
ACS Nano, 17(6), 5561–5569, 2023

46. Ion-gel-based light-emitting devices using transition metal dichalcogenides and hexagonal boron nitride heterostructures
Hao Ou, Koshi Oi, Rei Usami, Takahiko Endo, Yasumitsu Miyata, Jiang Pu, and Taishi Takenobu
Japanese Journal of Applied Physics, 62(Number SC), SC1026-1-SC1026-5, 2023

45. Continuous color-tunable light-emitting devices based on compositionally graded monolayer transition metal dichalcogenide alloys
Jiang Pu, Hao Ou, Tomoyuki Yamada, Naoki Wada, Hibiki Naito, Hiroto Ogura, Takahiko Endo, Zheng Liu, Toshifumi Irisawa, Kazuhiro Yanagi, Yusuke Nakanishi, Yanlin Gao, Mina Maruyama, Susumu Okada, Keisuke Shinokita, Kazunari Matsuda, Yasumitsu Miyata, Taishi Takenobu
Advanced Materials, 34(44), 2203250, 2022

44. Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition
Mitsuhiro Okada, Jiang Pu, Yung-Chang Lin, Takahiko Endo, Naoya Okada, Wen-Hsin Chang, Anh Khoa Augustin Lu, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo, Yasumitsu Miyata, Kazu Suenaga, Taishi Takenobu, Takatoshi Yamada, and Toshifumi Irisawa
ACS Nano, 16(8), 13069-13081, 2022

43. Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers
Naoki Wada, Jiang Pu, Yuhei Takaguchi, Wenjin Zhang, Zheng Liu, Takahiko Endo, Toshifumi Irisawa, Kazunari Matsuda, Yuhei Miyauchi, Taishi Takenobu, Yasumitsu Miyata
Advanced Functional Materials, 32(40), 2203602-1-9, 2022

42. Electric-Field-Induced Metal-Insulator Transition and Quantum Transport in Large-Area Polycrystalline MoS2 Monolayers
Hao Ou, Tomoyuki Yamada, Masaya Mitamura, Yusuke Edagawa, Tatsuma D. Matsuda, Kazuhiro Yanagi, Chang-Hsiao Chen, Lain-Jong Li, Taishi Takenobu, Jiang Pu
Physical Review Materials, 6(6), 064005-1-7, 2022

41. Ultrafast Singlet Fission and Efficient Carrier Transport in a Lamellar Assembly of Bis[(trialkoxyphenyl)ethynyl]pentacene
Hayato Sakai, Keisuke Yoshino, Yoshiaki Shoji, Takashi Kajitani, Jiang Pu, Takanori Fukushima, Taishi Takenobu, Nikolai V. Tkachenko, and Taku Hasobe
J. Phys. Chem. C, 126(22), 9396-9406, 2022

40. Formation of a Two-Dimensional Electronic System in Laterally Assembled WTe Nanowires
Hiroshi Shimizu, Jiang Pu, Zheng Liu, Hong En Lim, Mina Maruyama, Yusuke Nakanishi,
Shunichiro Ito, Iori Kikuchi, Takahiko Endo, Kazuhiro Yanagi, Yugo Oshima, Susumu Okada,
Taishi Takenobu, Yasumitsu Miyata
ACS Applied Nano Materials, 5(5), 6277-6284, 2022

39. Nanowire-to-Nanoribbon Conversion in Transition-Metal Chalcogenides: Implications for One-Dimensional Electronics and Optoelectronics
Hong En Lim, Zheng Liu, Juan Kim, Jiang Pu, Hiroshi Shimizu, Takahiko Endo, Yusuke Nakanishi, Taishi Takenobu, Yasumitsu Miyata
ACS Appl. Nano Mater., 5(2), 1775–1782, 2021

38. Recent Advances in Light-Emitting Electrochemical Cells with Low-Dimensional Quantum Materials
Jiang Pu, Taishi Takenobu
Journal of the Imaging Society of Japan(日本画像学会誌), 60(6), 656-672, 2021

37. Room-Temperature Chiral Light-Emitting Diode Based on Strained Monolayer Semiconductors
Jiang Pu, Wenjin Zhang, Hirofumi Matsuoka, Yu Kobayashi, Yuhei Takaguchi, Yasumitsu Miyata, Kazunari Matsuda, Yuhei Miyauchi, and Taishi Takenobu
Advanced Materials, 33(36), 2100601, 2021

36. Spatial Control of Dynamic p–i–n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices
Hao Ou, Hirofumi Matsuoka, Juliette Tempia, Tomoyuki Yamada, Togo Takahashi, Koshi Oi, Yuhei Takaguchi, Takahiko Endo, Yasumitsu Miyata, Chang-Hsiao Chen, Lain-Jong Li, Jiang Pu, and Taishi Takenobu
ACS Nano, 15(8), 12911-12921, 2021

35. Electric Double Layer Doping of Charge-Ordered Insulators α-(BEDT-TTF)₂I₃ and α-(BETS)₂I₃
Yoshitaka Kawasugi, Hikaru Masuda, Jiang Pu, Taishi Takenobu, Hiroshi M. Yamamoto, Reizo Kato, and Naoya Tajima
Crystals, 11(7), 791, 2021

34. Air-stable and efficient electron doping of monolayer MoS2 by salt–crown ether treatment
Hiroto Ogura, Masahiko Kaneda, Yusuke Nakanishi, Yoshiyuki Nonoguchi, Jiang Pu, Mari Ohfuchi, Toshifumi Irisawa, Hong En Lim, Takahiko Endo, Kazuhiro Yanagi, Taishi Takenobu, Yasumitsu Miyata
Nanoscale, 13(19), 8784-8789, 2021

33. Three-dimensional networks of superconducting NbSe2 flakes with nearly isotropic large upper critical field
Togo Takahashi, Chisato Ando, Mitsufumi Saito, Yasumitsu Miyata, Yusuke Nakanishi, Jiang Pu, Taishi Takenobu
npj 2d materials and applications, 5, 31, 2021

32. One-dimensionality of thermoelectric properties of semiconducting nanomaterials
Yota Ichinose, Manaho Matsubara, Yohei Yomogida, Akari Yoshida, Kan Ueji, Kaito Kanahashi, Jiang Pu, Taishi Takenobu, Takahiro Yamamoto, and Kazuhiro Yanagi
Phys. Rev. Materials, 5, 025404-1-7, 2021

31. Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires
Hong En Lim, Yusuke Nakanishi, Zheng Liu, Jiang Pu, Mina Maruyama, Takahiko Endo, Chisato Ando, Hiroshi Shimizu, Kazuhiro Yanagi, Susumu Okada, Taishi Takenobu, and Yasumitsu Miyata Nano Letters, 21, 1, 243–249, 2021

30. A versatile structure of light-emitting electrochemical cells for printed electronics
Yuki Tanaka, Jiang Pu, and Taishi Takenobu
Appl. Phys. Express, 13(8), 084002, (2020)

29. Recent Progress on Light‐Emitting Electrochemical Cells with Nonpolymeric Materials
Keiichiro Matsuki, Jiang Pu, Taishi Takenobu
Adv. Funct. Mater., 30(33), 1908641 (2020)

28. CVD Growth of Large-Area InS Atomic Layers and Device Applications
Chien-Liang Tu, Kuang-l Lin, Jiang Pu, Ysai-Fu Chung, Chien-Nan Hsiao, An-Ci Huang, Jer-Ren Yang, Taishi Takenobu and Chang-Hsiao Chen
Nanoscale, 12(17), 9366-9374 (2020)

27. 2D Materials for Large‐Area Flexible Thermoelectric Devices
K. Kanahashi, Jiang Pu, T. Takenobu
Advanced Energy Materials, 10(11), 1902842 (2019)

26. Non-Fermi-liquid behavior and doping asymmetry in an organic Mott insulator interface
Y. Kawasugi, K. Seki, Jiang Pu, T. Takenobu, S. Yunoki, H. M. Yamamoto, R. Kato
Physical Review B, 100, 115141 (2019)

25. Electrolyte-Gating-Induced Metal-Like Conduction in Nonstoichiometric Organic Crystalline Semiconductors under Simultaneous Bandwidth Control
H. Ito, Y. Edagawa, Jiang Pu, H. Akutsu, M. Suda, H. M. Yamamoto, Y. Kawasugi, R. Haruki, R. Kumai, T. Takenobu
Physica Status Solidi RRL, 13, 1900162 (2019)

24. Exciton Polarization and Renormalization Effect for Optical Modulation in Monolayer Semiconductors
Jiang Pu, K. Matsuki, L. Chu, Y. Kobayashi, S. Sasaki, Y. Miyata, G. Eda, T. Takenobu
ACS Nano, 13, 9218 (2019)

23. Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device
Y. Kawasugi, K. Seki, S. Tajima, Jiang Pu, T. Takenobu, S. Yunoki, H. M. Yamamoto, R. Kato
Science Advances, 5, eaav7282 (2019)

22. Monolayer Transition Metal Dichalcogenides as Light Sources
Jiang Pu, T. Takenobu
Advanced Materials, 30, 1707627 (2018)

21. Synthesis of large-area InSe monolayers by chemical vapor deposition
H.-C. Chang, C.-L. Tu, K.-I. Lin, Jiang Pu, T. Takenobu, C.-N Hsiao, C.-H. Chen
Small, 14, 1802351 (2018)

20. Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
H. Matsuoka, K. Kanahashi, N. Tanaka, Y. Shoji, L.-J. Li, Jiang Pu, H. Ito, H. Ohta, T. Fukushima, T. Takenobu
Japanese Journal of Applied Physics, 57, 02CB15 (2018)

19. Self-Aligned and Scalable Growth of Monolayer WSe2-MoS2 Lateral Heterojunctions
M.-Y. Li, Jiang Pu, J.-K. Huang, Y. Miyauchi, K. Matsuda, T. Takenobu, L.-J. Li
Advanced Functional Materials, 28, 1706860 (2018)

18. A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers
Jiang Pu, T. Fujimoto, Y. Ohasi, S. Kimura, C.-H. Chen, L.-J. Li, T. Sakanoue, T. Takenobu
Advanced Materials, 29, 1606918 (2017)

17. Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals
D. Kozawa, Jiang Pu, R. Shimizu, S. Kimura, M.-H. Chiu, K. Matsuki, Y. Wada, T. Sakanoue, Y. Iwasa, L.-J. Li, T. Takenobu
Applied Physics Letters, 109, 201107 (2016)

16. Simultaneous enhancement of conductivity and Seebeck coefficient in an organic Mott transistor
Y. Kawasugi, K. Seki, Y. Edagawa, Y. Sato, Jiang Pu, T. Takenobu, S. Yunoki, H. M. Yamamoto, R. Kato
Applied Physics Letters, 109, 233301 (2016)

15. Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers
Jiang Pu, K. Funahashi, C.-H. Chen, M.-Y. Li, L.-J. Li, T. Takenobu
Advanced Materials, 28, 4111 (2016)

14. Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator
Y. Kawasugi, K. Seki, Y. Edagawa, Y. Sato, Jiang Pu, T. Takenobu, S. Yunoki, H. M. Yamamoto, R. Kato
Nature Communications, 7, 12356 (2016)

13. Thermoelectric Detection of Multi-Subband Density of States in Semiconducting and Metallic Single-Walled Carbon Nanotubes
S. Shimizu, T. Iizuka, K. Kanahashi, Jiang Pu, K. Yanagi, T. Takenobu, Y. Iwasa
Small, 12, 3388 (2016)

12. Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers
Jiang Pu, K. Kanahashi, N. T. Cuong, C.-H. Chen, L.-J. Li, S. Okada, H. Ohta, T. Takenobu
Physical Review B, 94, 014312 (2016)

11. Effects of electrolyte gating on photoluminescence spectra of large-area WSe2 monolayer films
K. Matsuki, Jiang Pu, D. Kozawa, K. Matsuda, L.-J. Li, T. Takenobu
Japanese Journal of Applied Physics, 55, 06GB02 (2016)

10. Strategy for improved frequency response of electric double-layer capacitors
Y. Wada, Jiang Pu, T. Takenobu
Applied Physics Letters, 107, 153505 (2015)

9. Large-area WSe2 electric double layer transistors on a plastic substrate
K. Funahashi, Jiang Pu, M.-Y. Li, L.-J. Li, Y. Iwasa, T. Takenobu
Japanese Journal of Applied Physics, 54, 06FF06 (2015)

8. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection
Y.-H. Chang, W. Zhang, Y. Zhu, Y. Han, Jiang Pu, J.-K. Chang, W.-T. Hsu, J.-K. Huang, C.-L. Hsu, M.-H. Chiu, T. Takenobu, H. Li, C.-I. Wu, W.-H. Chang, A. T. S. Wee, L.-J. Li
ACS Nano, 8, 8582 (2014)

7. Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration
C.-H. Chen, C.-L. Wu, Jiang Pu, M.-H. Chiu, P. Kumar, T. Takenobu, L.-J. Li
2D Materials, 1, 034001 (2014)

6. Flexible and stretchable thin-film transistors based on molybdenum disulphide
Jiang Pu, L.-J. Li, T. Takenobu
Physical Chemistry Chemical Physics, 16, 14996 (2014)

5. Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors
L. Chu, H. Schmidt, Jiang Pu, S. Wang, B. Özyilmaz, T. Takenobu, G. Eda
Scientific Reports, 4, 7293 (2014)

4. Large-area synthesis of highly crystalline WSe2 monolayers and device applications
J.-K. Huang, Jiang Pu, C.-L. Hsu, M.-H. Chiu, Z.-Y. Juang, Y.-H. Chang, W.-H. Chang, Y. Iwasa, T. Takenobu, L.-J. Li
ACS Nano, 8, 923 (2014)

3. Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics
Jiang Pu, Y. Zhang, Y. Wada, J. T.-W. Wang, L.-J. Li, Y. Iwasa, T. Takenobu
Applied Physics Letters, 103, 023505 (2013)

2. Highly flexible MoS2 thin-film transistors with ion gel dielectrics
Jiang Pu, Y. Yomogida, K.-K. Liu, L.-J. Li, Y. Iwasa, T. Takenobu
Nano Letters, 12, 4013 (2012)

1. Ambipolar Organic Single-Crystal Transistors Based on Ion Gels
Y. Yomogida, Jiang Pu, H. Shimotani, S. Ono, S. Hotta, Y. Iwasa, T. Takenobu
Advanced Materials, 24, 4392 (2012)

Proceeding

6. Room-Temperature Valley-Polarized Light-Emitting Devices via Strained Monolayer Semiconductors
Jiang Pu, H. Matsuoka, Y. Kobayashi, Y. Miyata, T. Takenobu
Extended Abstract for International Conference on Solid State Devices and Materials (SSDM 2019)

5. Electron-Hole Doping Asymmetry of Superconductivity in a Strain-Tuned Organic Mott Transistor
Y. Kawasugi, K. Seki, Jiang Pu, T. Takenobu, S. Yunoki, H. Yamamoto, R. Kato
American Physical Society (APS) Meeting Abstract (2019)

4. Direct Electroluminescence Imaging of Transition Metal Dichalcogenides
Jiang Pu, W. Zhang, Y. Kobayashi, Y. Takaguchi, Y. Miyata, L.-J. Li, K. Matsuda, Y. Miyauchi, T. Takenobu
Extended Abstract for International Conference on Solid State Devices and Materials (SSDM 2018)

3. Scalable and Self-Aligned Growth of Two-Dimensional Transition Metal Dichalcogenides Lateral Heterojunctions for Optoelectronic Applications
M.-Y. Li, Jiang Pu, J.-K. Huang, Y. Miyauchi, K. Matsuda, T. Takenobu, L.-J. Li
Meeting Abstract,The Electrochemical Society, 1361(2017)

2. Insulator-to-Metal transition in polycrystalline MoS2 films induced by electric double layer gating
Y. Edagawa, Jiang Pu, T. Osakabe, L.-J. Li, H. Ito, T. Takenobu
Extended Abstract for International Conference on Solid State Devices and Materials (SSDM 2016)

1. Novel functional devices of transition metal dichalcogenide monolayers
T. Takenobu, Jiang Pu, L.-J. Li, Y. Iwasa
21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), IEEE, 283-286 (2014)

解説他

5. イオンゲルによるトランジスタと発光・受光素子
蒲 江, 竹延 大志
グラフェンから広がる二次元物質の新技術と応用, エヌ・ティー・エス, 203-210 (2020)

4. フレキシブルトランジスタ開発
蒲 江, 竹延 大志
カーボンナノチューブ・グラフェンの応用研究最前線, エヌ・ティー・エス, 243-249, ISBN:978-4-86043-456-4 (2016)

3. カルコゲナイド系層状物質を用いた電気二重層トランジスタ
蒲 江, 竹延 大志
カルコゲナイド系層状物質の最新研究, シーエムシー出版, 217-227, ISBN:978-4-7813-1166-1 (2016)

2. Functional Nanomaterial Devices
Jiang Pu, Taishi Takenobu
Organic Electronics Materials and Devices, Springer Japan, 155-193, ISBN:978-4-431-55653-4 (2015)

1. Molybdenum Disulfide Enables Flexible Transistors
Lain-Jong Li, Jiang Pu, Taishi Takenobu
Chemical & Engineering News, American Chemical Society, ISSN:0009-2347 (2012)